Infineon IRF6216TRPBF: A High-Performance 30V N-Channel Power MOSFET in D-Pak
The Infineon IRF6216TRPBF is a state-of-the-art Single N-Channel HEXFET Power MOSFET designed to meet the demanding requirements of modern power management and switching applications. Engineered with Infineon's advanced HEXFET technology, this MOSFET delivers an exceptional blend of low on-state resistance (RDS(on)) and high current handling capability, making it an ideal choice for a wide range of industrial, automotive, and consumer electronics.
Encased in the robust and industry-standard D-Pak (TO-252) package, this device offers an excellent balance of compact size and efficient thermal performance. The package is designed for easy mounting onto printed circuit boards (PCBs) and is well-suited for high-volume automated assembly processes. Its low profile and high power density are critical for space-constrained applications where board real estate is at a premium.

A key highlight of the IRF6216TRPBF is its optimized switching characteristics. With a maximum drain-to-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 39A, it provides reliable performance in low-voltage, high-current circuits. The low gate charge (Qg) and fast switching speeds minimize switching losses, which is paramount for improving overall efficiency in switch-mode power supplies (SMPS), DC-DC converters, motor control systems, and battery management systems.
Furthermore, this MOSFET is characterized by its enhanced durability and reliability. It features a low thermal resistance and is capable of operating effectively over a wide temperature range, ensuring stable performance even under strenuous conditions. The device is also qualified for automotive applications, adhering to the stringent standards required for such uses.
ICGOOODFIND: The Infineon IRF6216TRPBF stands out as a superior component for designers seeking a efficient, compact, and robust power switching solution. Its combination of low RDS(on), high current capacity, and industry-standard packaging makes it a versatile and highly reliable choice for optimizing power efficiency in modern electronic designs.
Keywords: HEXFET Technology, Low RDS(on), D-Pak Package, Fast Switching, High Current Handling.
