Xnergy has launched a 3300V SiC MOSFET built on its 8‑inch SiC process platform, targeting high‑power, high‑voltage applications such as solid‑state transformers (SST) . Samples are now with key customers for validation.

Compared to conventional 1200V‑based designs, the 3300V device enables 1800–2200V bus voltage , reducing the number of cascaded stages by 60% and slashing peripheral component count by 70% . This simplifies PCB layout, assembly, and control – cutting total system BOM cost by 20–35% while supporting SST miniaturization and higher efficiency.

Xnergy now offers a full 650V–3300V SiC MOSFET portfolio, with its 8‑inch SiC line in stable mass production. According to Yole’s March 2026 ranking, Xnergy is #1 in China and top‑5 globally for SiC device shipments.

With generative AI driving rack power toward megawatt levels and 800V DC distribution gaining traction, SSTs are becoming critical in AI data centers, renewables, and smart grids. Xnergy’s high‑voltage SiC devices position it to capture this emerging market.

ICgoodFind: Xnergy’s 3300V SiC MOSFET turns SST cost economics in its favor, expanding the domestic wide‑bandgap footprint in AI power and grid infrastructure.